IEC 62047-9:2011

Title

Language: EN Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Language: FR Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

Abstract

Language: EN IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

Language(s)
Language: EN Language: FR
Edition
1.0
Date of issue
13.07.2011
TC 47/SC 47F
ICS Codes
31.080.99
Publication number
62047
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