IEC 60747-8:2010


Language: EN Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

Language: FR Dispositifs à semiconducteurs - Dispositifs descrets - Partie 8: Transistors à effet de champ


Language: EN IEC 60747-8:2010 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous edition are listed below. a) "Clause 3 Classification" was moved and added to Clause 1. b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions. c) Clause 5, 6 and 7 were amended with necessary additions and deletions. This publication is to be read in conjunction with IEC 60747-1:2006 .

Language: EN Language: FR
Date of issue
TC 47/SC 47E
ICS Codes
Publication number

To use the preview feature, please enable JavaScript in your Browser

Price (excl. VAT)
€ 272,70 (Download and hardcopy)
Delivery format
postal download (155 Pages)




Document for download (PDF) PDF document (download version)
ZIP File for download ZIP file (download version)
Shipping item Paper (print version)/shipping item
Adobe DRM ePub File E-book (Adobe DRM ePub)
Storage medium Storage medium
Database Database
Bezugsart Online Viewing access (7-days available online)
Mandatory Standard according current regulation Mandatory Standard according current regulation

This website uses cookies. By continuing to use this website you are giving consent to cookies being used. For information on cookies, please look at our privacy statement.